LH28F016SCR-L95 Sharp Electronics, LH28F016SCR-L95 Datasheet - Page 6

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LH28F016SCR-L95

Manufacturer Part Number
LH28F016SCR-L95
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F016SCR-L95

Cell Type
NOR
Density
16Mb
Access Time (max)
95ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
21b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
3.3/5/12V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.75V
Operating Supply Voltage (max)
5.25V
Word Size
8b
Number Of Words
2M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F016SCR-L95
Manufacturer:
SHARP
Quantity:
168
1 INTRODUCTION
This
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4, and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications. LH28F016SCHT-ZN
Flash
application notes and design tools which are
referenced in Section 7.
1.1 New Features
The
memory
SHARP’s 28F008SA. Key enhancements over the
28F008SA include:
Both devices share a compatible pinout, status
register,
similarities enable a clean upgrade from the
28F008SA to LH28F016SCHT-ZN. When upgrading,
it is important to note the following differences:
1.2 Product Overview
The LH28F016SCHT-ZN is a high-performance
16M-bit SmartVoltage Flash memory organized as
2M-byte of 8 bits. The 2M-byte of data is arranged in
thirty-two 64K-byte blocks which are individually
erasable, lockable, and unlockable in-system. The
memory map is shown in Figure 3.
•SmartVoltage Technology
•Enhanced Suspend Capabilities
•In-System Block Locking
•Because of new feature support, the two devices
•V
•To take advantage of SmartVoltage technology,
have different device codes. This allows for
software optimization.
support 3.3V and 5V block erase, byte write, and
lock-bit configuration operations. The V
transitions to GND is recommended for designs
that switch V
allow V
PPLK
LH28F016SCHT-ZN
datasheet
memory
PP
has been lowered from 6.5V to 1.5V to
maintains
and
connection to 3.3V or 5V.
PP
software
off during read operation.
documentation
contains
backwards-compatibility
command
SmartVoltage
LH28F016SCHT-ZN
also
set.
PP
includes
voltage
These
Flash
with
LHF16CZN
SmartVoltage technology provides a choice of V
and V
system performance and power expectations. 2.7V
V
5V V
performance. V
for a separate 12V converter, while V
maximizes block erase and byte write performance.
In addition to flexible erase and program voltages,
the dedicated V
when V
NOTE:
1. Block erase, byte write and lock-bit configuration
Internal
automatically configures the device for optimized
read and write operations.
A Command User Interface (CUI) serves as the
interface between the system processor and internal
operation of the device. A valid command sequence
written to the CUI initiates device automation. An
internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for
block erase, byte write, and lock-bit configuration
operations.
A block erase operation erases one of the device’s
64K-byte blocks typically within 0.3s (5V V
V
independently erased 100,000 times (3.2 million
block erases per device). Block erase suspend mode
allows system software to suspend block erase to
read or write data from any other block.
Writing memory data is performed in byte increments
typically within 6µs (5V V
suspend mode enables the system to read data or
execute code from any other flash memory array
location.
CC
PP
Table 1. V
operations with V
) independent of other blocks. Each block can be
consumes approximately one-fifth the power of
CC
PP
Offered by SmartVoltage Technology
V
PP
. But, 5V V
CC
combinations, as shown in Table 1, to meet
≤V
2.7V
V
3.3V
Voltage
5V
CC
PPLK
CC
(1)
PP
PP
.
and V
at 3.3V and 5V eliminates the need
and
pin gives complete data protection
CC
CC
<3.0V are not supported.
PP
V
provides the highest read
Voltage Combinations
PP
CC
, 12V V
detection
3.3V, 5V, 12V
V
PP
5V, 12V
PP
Voltage
). Byte write
Rev. 1.2
CC
Circuitry
PP
, 12V
=12V
CC
3

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