LH28F160BJHE-BTL70 Sharp Electronics, LH28F160BJHE-BTL70 Datasheet - Page 4

• Manufacturer Part Number: LH28F160BJHE-BTL70
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTL70

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

n Low Voltage Operation
n User-Configurable
n High-Performance Read Access Time
n Operating Temperature
n Low Power Management
n Optimized Array Blocking Architecture
n Extended Cycling Capability
SHARP’s LH28F160BJHE-BTL70
wide range of applications.
LH28F160BJHE-BTL70
capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the LH28F160BJHE-BTL70
hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code
security needs.
The LH28F160BJHE-BTL70
standard package: the 48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
SHARI=
-
-
-
-
-
-
-
-
-
-
-
70n.s(V,,=2.7V-3.6V)
Typ. 2pA (V,,=3.OV)
Typ. 120pA (V,,=3.OV,
Read Current
Two 4K-word (8K-byte) Boot Blocks
Thirty-one 32K-word (64K-byte) Main Blocks
Bottom Boot Location
Minimum 100,000 Block Erase Cycles
V,,=Vccw=2.1V-3.6V
-40°C to +wc
Automatic Power Savings Mode Decreases ICCR in
Static Mode
Six 4K-word (8K-byte) Parameter Blocks
can operate at V,,=2.7V-3.6V
x8 or x 16 Operation
is manufactured on SHARP’s
Standby Current
16M-BIT ( 1Mbit x16 / 2Mbit x8 )
Single Voltage
TA=+25”C, f=32kHz)
Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a
Boot Block Flash MEMORY
offers four levels of protection: absolute protection with V,--wIV,,,,,
LH28F160BJHE-BTL70
LHFl6507
and Vccw- -2.7V-3.6V
0.25pm ETOXTM* process technology. It come in industry-
n Enhanced Automated Suspend Options
n Enhanced Data Protection Features
w Automated Block Erase, Full Chip Erase,
n SRAM-Compatible Write Interface
n Industry-Standard Packaging
n ETOXTM* Nonvolatile Flash Technology
n CMOS Process (P-type silicon substrate)
H Not designed or rated as radiation hardened
-
-
-
-
-
-
-
Word/Byte Write and Lock-Bit Configuration
-
-
-
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
Command User Interface (CUI)
48-Lead TSOP
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Absolute Protection with V,,wIV,-,
Status Register (SR)
or 11.4V-12.6V. Its low voltage operation
selective
Rev. 1.2
2