LH28F160BJHE-BTL70 Sharp Electronics, LH28F160BJHE-BTL70 Datasheet - Page 36

• Manufacturer Part Number: LH28F160BJHE-BTL70
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTL70

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

4. Vccw should be held at VCCwHr,Z until determination of block erase, full chip erase, word/byte write or lock-bit
I Svm.
,hWH
NOTES:
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A,, and D,, for block erase, full chip erase, word/byte write or lock-bit configuration.
5. If BYTE# switch during reading cycle, exist the regulations separately.
6.2.5 AC CHARACTERISTICS
1. Read timing characteristics during block erase, full chip erase, word/byte write and lock-bit configuration operations are
tOVVL
toVSL
tFVWH
fwHFv
tAVAV
tPHWL
tELwL
twLWH
SHARI=
the same as during read-only operations. Refer to AC Characteristics for read-only operations.
configuration success (SR.1/3/4/5=0).
I
RP# High Recovery to WE# Going Low
Vccw Hold from Valid SRD, RY/BY# High Z
WP# V,, Hold from Valid SRD, RY/BY# High Z
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
Write Cycle Time
CE# Setup to WE# Going Low
WE# Pulse Width
WP#VIB Setup to WE# Going High
Parameter
- WRITE OPERATIONS(l)
V,,=2.lV-3.6V,
LHFl6507
T,=-40°C
to +85”C
1 Notes
2,4
2,4
5
5
2
2
1
Min.
100
40
70
70
40
10
0
0
1
1
Max.
1 Unit
Rev. 1.2
ns
ns
ns
ns
ns
P
ns
ns
ns
1