LH28F160BJHE-BTLZD Sharp Electronics, LH28F160BJHE-BTLZD Datasheet - Page 16

• Manufacturer Part Number: LH28F160BJHE-BTLZD
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTLZD

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

4.8 Block Erase Suspend Command
The Block Erase Suspend command allows block-erase
interruption to read or word write data in another block of
memory. Once the block erase process starts, writing the
Block Erase Suspend command requests that the WSM
suspend the block erase sequence at a predetermined point
in the algorithm. The device outputs status register data
when read after the Block Erase Suspend command is
written. Polling status register bits SR.7 and SR.6 can
determine when the block erase operation has been
suspended (both will be set to "1"). Specification t
defines the block erase suspend latency.
When Block Erase Suspend command write to the CUI, if
block erase was finished, the device places read array
mode. Therefore, after Block Erase Suspend command
write to the CUI, Read Status Register command (70H)
has to write to CUI, then status register bit SR.6 should be
checked for places the device in suspend mode.
At this point, a Read Array command can be written to
read data from blocks other than that which is suspended.
A Word Write command sequence can also be issued
during erase suspend to program data in other blocks.
Using the Word Write Suspend command (see Section
4.9), a word write operation can also be suspended. During
a word write operation with block erase suspended, status
register bit SR.7 will return to "0". However, SR.6 will
remain "1" to indicate block erase suspend status.
The only other valid commands while block erase is
suspended are Read Status Register and Block Erase
Resume. After a Block Erase Resume command is written
to the flash memory, the WSM will continue the block
erase process. Status register bits SR.6 and SR.7 will
automatically clear. After the Erase Resume command is
written, the device automatically outputs status register
data when read (see Figure 8). V
V
while block erase is suspended. RP# must also remain at
V
level used for block erase). Block erase cannot resume
until word write operations initiated during block erase
suspend have completed.
If the time between writing the Block Erase Resume
command and writing the Block Erase Suspend command
is shorter than t
repeatedly, a longer time is required than standard block
erase until the completion of the operation.
CCWH1/2
IH
. WP# must also remain at V
(the same V
ERES
and both commands are written
CCW
level used for block erase)
IL
CCW
or V
IH
must remain at
(the same WP#
WHR12
4.9 Word Write Suspend Command
The Word Write Suspend command allows word write
interruption to read data in other flash memory locations.
Once the word write process starts, writing the Word
Write Suspend command requests that the WSM suspend
the Word write sequence at a predetermined point in the
algorithm. The device continues to output status register
data when read after the Word Write Suspend command is
written. Polling status register bits SR.7 and SR.2 can
determine when the word write operation has been
suspended (both will be set to "1"). Specification t
defines the word write suspend latency.
When Word Write Suspend command write to the CUI, if
word write was finished, the device places read array
mode. Therefore, after Word Write Suspend command
write to the CUI, Read Status Register command (70H)
has to write to CUI, then status register bit SR.2 should be
checked for places the device in suspend mode.
At this point, a Read Array command can be written to
read data from locations other than that which is
suspended. The only other valid commands while word
write is suspended are Read Status Register and Word
Write Resume. After Word Write Resume command is
written to the flash memory, the WSM will continue the
word write process. Status register bits SR.2 and SR.7 will
automatically clear. After the Word Write Resume
command is written, the device automatically outputs
status register data when read (see Figure 9). V
remain at V
write) while in word write suspend mode. RP# must also
remain at V
same WP# level used for word write).
If the time between writing the Word Write Resume
command and writing the Word Write Suspend command
is short and both commands are written repeatedly, a
longer time is required than standard word write until the
completion of the operation.
CCWH1/2
IH
. WP# must also remain at V
(the same V
CCW
level used for word
IL
or V
CCW
Rev. 1.27
IH
WHR11
must
(the