LH28F160BVHE-TTL10 Sharp Electronics, LH28F160BVHE-TTL10 Datasheet - Page 5

• Manufacturer Part Number: LH28F160BVHE-TTL10
• Manufacturer: Sharp Electronics

Specifications of LH28F160BVHE-TTL10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

■ Single Voltage Operation
■ High-Block Erase and Word/Byte Write
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Access Time
■ Optimized Array Blocking Architecture
■ Extended Cycling Capability
■ Low Power Management
SHARP’s LH28F160BVHE-TTL10 Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a
wide range of applications. LH28F160BVHE-TTL10 can operate at V
operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F160BVHE-TTL10 offers two levels of protection: absolute
protection with V
code security needs.
The LH28F160BVHE-TTL10 is manufactured on SHARP’s 0.35µm ETOX
standard package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
sharp
Performance
2.7V-3.6V V
Operation
Usable 12V±0.6V V
100ns(
Two 4k-word Boot Blocks
Six 4k-word Parameter Blocks
Thirty-one 32k-word Main Blocks
Top Boot Location
100,000 Block Erase Cycles
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
I
CC
in Static Mode
V
PP
CC
at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
=2.7V-3.6V, T
CC
and V
16M-BIT (2Mbit × 8 / 1Mbit × 16)
PP
Boot Block FLASH MEMORY
PP
A
=-40°C to +85°C
Read/Write/Erase
LH28F160BVHE-TTL10
)
LHF16V04
■ Enhanced Data Protection Features
■ Enhanced Automated Suspend Options
■ Automated Word/Byte Write and Block Erase
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened
CC
Absolute Protection with V
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=V
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Command User Interface
Status Register
48-Lead TSOP
=2.7V-3.6V and V
TM*
TM*
Nonvolatile Flash Technology
process technology. It come in industry-
PP
=2.7V-3.6V. Its low voltage
PP
=GND
Rev. 1.1
IL
2