LH28F160BVHE-TTL10 Sharp Electronics, LH28F160BVHE-TTL10 Datasheet - Page 12

• Manufacturer Part Number: LH28F160BVHE-TTL10
• Manufacturer: Sharp Electronics

Specifications of LH28F160BVHE-TTL10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

3.5 Read Identifier Codes Operation
The
manufacturer code and device code (see Figure 4). Using
the manufacturer and device codes, the system CPU can
automatically match the device with its proper algorithms.
sharp
[A
FFFFF
00000
00002
00001
19
-A
Figure 4. Device Identifier Code Memory Map
read
0
]
identifier
Reserved for Future Implementation
codes
Manufacturer Code
Device Code
operation
outputs
the
LHF16V04
3.6 Write
Writing commands to the CUI enable reading of device
data and identifier codes. They also control inspection and
clearing of the status register. When V
V
and word/byte write.
The Block Erase command requires appropriate command
data and an address within the block to be erased. The
Word/Byte Write command requires the command and
address of the location to be written.
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are active. The
address and data needed to execute a command are latched
on the rising edge of WE# or CE# (whichever goes high
first). Standard microprocessor write timings are used.
Figures 13 and 14 illustrate WE# and CE# controlled write
operations.
4 COMMAND DEFINITIONS
When the V
status register, identifier codes, or blocks are enabled.
Placing V
and word/byte write operations.
Device operations are selected by writing specific
commands into the CUI. Table 4 defines these commands.
PP
=V
PPH1/2
PPH1/2
PP
, the CUI additionally controls block erasure
voltage ≤ V
on V
PP
enables successful block erase
PPLK
, Read operations from the
CC
=2.7V-3.6V and
Rev. 1.1
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