AT45DB081A-TC Atmel, AT45DB081A-TC Datasheet - Page 25

no-image

AT45DB081A-TC

Manufacturer Part Number
AT45DB081A-TC
Description
Manufacturer
Atmel
Datasheet

Specifications of AT45DB081A-TC

Density
8Mb
Access Time (max)
100ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
10mA
Mounting
Surface Mount
Pin Count
28
Lead Free Status / Rohs Status
Not Compliant
Figure 2. Algorithm for Randomly Modifying Data
Notes:
Sector Addressing
PA11
0
0
0
0
1
1
1
1
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
PA10
0
0
0
0
0
0
1
1
PA9
0
0
0
1
0
1
0
1
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
PA8
X
X
X
X
X
0
0
1
(82H, 85H)
PA7
X
X
X
X
X
X
X
0
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
START
END
PA6
provide address of
page to modify
X
X
X
X
X
X
X
0
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
PA5
X
X
X
X
X
X
X
0
If planning to modify multiple
bytes currently stored within
a page of the Flash array
PA4
X
X
X
X
X
X
X
0
PA3
X
X
X
X
X
X
X
0
PA2-PA0
X
X
X
X
X
X
X
X
Sector
0
1
2
3
6
7
8
9
25

Related parts for AT45DB081A-TC