M29F080A90M6 Micron Technology Inc, M29F080A90M6 Datasheet

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M29F080A90M6

Manufacturer Part Number
M29F080A90M6
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F080A90M6

Lead Free Status / Rohs Status
Compliant

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0
April 2000
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 70ns
PROGRAMMING TIME
– 8µs by Byte typical
16 UNIFORM 64 Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: F1h
Erase Suspend
8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory
Figure 1. Logic Diagram
A0-A19
RP
TSOP40 (N)
10 x 20mm
W
G
E
20
V CC
M29F080A
V SS
44
M29F080A
SO44 (M)
1
8
DQ0-DQ7
RB
AI00501C
1/21

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M29F080A90M6 Summary of contents

Page 1

... Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs by Byte typical 16 UNIFORM 64 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – ...

Page 2

M29F080A Figure 2. TSOP Connections A19 1 A18 A17 A16 A15 A14 A13 A12 M29F080A A11 A10 Table 1. Signal Names A0-A19 Address Inputs DQ0-DQ7 Data ...

Page 3

Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option 1) T Ambient Operating Temperature (Temperature Range Option 6) A Ambient Operating Temperature (Temperature Range Option 3) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input ...

Page 4

M29F080A A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low After Reset/Block Temporary Unprotect PLPX goes High the memory will be ready for Bus IH Read and Bus Write operations after t ...

Page 5

... Protected blocks can be unprotected to allow data to be changed. Block Protection and ± 0.2V) CC Block Unprotection operations must only be per- formed on programming equipment. For further information refer to Application Note . The AN1122, Applying Protection and Unprotection to CC3 M29 Series Flash Address Inputs V V Cell Address ...

Page 6

M29F080A COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result ...

Page 7

Table 5. Commands Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Chip Erase 6 555 Block Erase 6+ 555 Erase Suspend 1 X Erase Resume 1 X Note: X Don’t Care, PA Program ...

Page 8

M29F080A Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the ...

Page 9

STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits in the ...

Page 10

M29F080A Figure 4. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The ...

Page 11

Table 8. AC Measurement Conditions Parameter AC Test Conditions Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform High Speed 3V 0V Standard ...

Page 12

M29F080A Table 10. DC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL ...

Page 13

Table 11. Read AC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) ...

Page 14

M29F080A Table 12. Write AC Characteristics, Write Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip ...

Page 15

Table 13. Write AC Characteristics, Chip Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable ...

Page 16

M29F080A Table 14. Reset/Block Temporary Unprotect AC Characteristics ( °C, – °C or –40 to 125 °C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low ...

Page 17

Table 15. Ordering Information Scheme Example: Device Type M29 Operating Voltage ± 10% CC Device Function 080A = 8 Mbit (1Mb x8), Uniform Block Speed 120 = ...

Page 18

M29F080A Table 16. Revision History Date July 1999 First Issue Removed 55ns speed option Chip Erase Max. specification added (Table 6) Block Erase Max. specification added (Table 6) Program Max. specification added (Table 6) 09/21/99 Chip Program Max. specification added ...

Page 19

Table 17. TSOP40 - 40 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 0. Figure 12. TSOP40 - 40 lead Plastic Thin Small ...

Page 20

M29F080A Table 18. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 1. 0.80 3° Figure 13. SO44 - 44 lead ...

Page 21

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

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