TEA1110A NXP Semiconductors, TEA1110A Datasheet - Page 14

TEA1110A

Manufacturer Part Number
TEA1110A
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TEA1110A

Operating Supply Voltage (typ)
2.9V
Max Transmitter Gain
44.7dB
Receiver Gain (max)
34dB
Operating Temp Range
-25C to 75C
Package Type
PDIP
Pin Count
14
Operating Current
1.1mA
Operating Temperature Classification
Commercial
Mounting
Through Hole
Lead Free Status / Rohs Status
Compliant

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Philips Semiconductors
2000 Feb 15
V
V
Automatic gain control (pin AGC)
I
I
DTMF amplifier (pin DTMF)
G
G
Mute function (pin MUTE)
V
V
I
start
stop
MUTE
Z
G
G
G
G
G
o(rms)
norx(rms)
IL
IH
Low voltage versatile telephone
transmission circuit with dialler interface
vdtmf
vct
SYMBOL
i
vrxr
vtrx
vdtmf(f)
vdtmf(T)
vtrxm
gain voltage reduction range
maximum receiving signal (RMS
value)
noise output voltage at pin QR
(RMS value)
gain control range for microphone
and receiving amplifiers with
respect to I
highest line current for maximum
gain
lowest line current for minimum
gain
input impedance
voltage gain from DTMF to LN
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
voltage gain from DTMF to QR
(confidence tone)
LOW level input voltage
HIGH level input voltage
input current
gain reduction for microphone and
receiving amplifiers
PARAMETER
line
= 15 mA
external resistor
connected between
GAR and QR
I
R
I
R
G
IR open-circuit;
R
psophometrically
weighted (P53 curve)
I
V
MUTE = LOW
f = 300 to 3400 Hz
T
V
R
MUTE = LOW
P
P
line
amb
DTMF
DTMF
L
L
L
L
vrx
= 0 mA sine wave drive;
= 0 mA sine wave drive;
= 150 ; THD = 2%
= 450 ; THD = 2%
= 150 ;
= 150
= 85 mA
= 33 dB;
14
= 25 to +75 C
CONDITIONS
= 20 mV (RMS);
= 20 mV (RMS);
24.1
V
V
EE
EE
MIN.
+ 1.5
0.4
0.25
0.35
5.9
23
56
20
25.3
1.5
80
TYP.
87
0.2
0.4
15
Product specification
TEA1110A
14
26.5
V
V
EE
CC
MAX.
+ 0.3 V
+ 0.4 V
dB
V
V
dBVp
dB
mA
mA
k
dB
dB
dB
dB
dB
UNIT
A

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