SI9956DY Vishay, SI9956DY Datasheet - Page 4

• Manufacturer Part Number: SI9956DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9956DY

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

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4
Si9956DY
Vishay Siliconix
0.01
0.1
–0.0
–0.2
–0.4
–0.6
–0.8
20
10
2
1
0.4
0.2
1
10
–50
0.2
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Source-Drain Diode Forward Voltage
–25
0.4
T
V
J
SD
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.6
J
– Temperature ( C)
25
10
–3
50
0.8
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 A
T
75
J
= 25 C
1.0
100
1.2
125
10
–2
Square Wave Pulse Duration (sec)
150
1.4
10
–1
30
25
20
15
10
0.6
0.5
0.4
0.3
0.2
0.1
5
0
0.010
0
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.100
1
– Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (sec)
– T
I
D
t
1
A
= 3.5 A
= P
t
2
DM
1.0
Z
6
thJA
S-00652—Rev. L, 27-Mar-00
thJA
t
t
Document Number: 70140
1
2
(t)
= 62.5 C/W
10
8
10
30
10
30