SI9956DY Vishay, SI9956DY Datasheet - Page 2

• Manufacturer Part Number: SI9956DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9956DY

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2
Si9956DY
Vishay Siliconix
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
a
Parameter
b
b
b
300 s, duty cycle
b
b
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
2%.
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
V
V
V
I
I
DS
D
DS
I
= 10 V, V
F
V
= 16 V, V
V
V
V
V
V
V
V
1 A V
1 A, V
10 V V
= 1.7 A, di/dt = 100 A/ s
DS
V
I
DS
Test Condition
DS
DS
S
DS
GS
DD
DD
GS
= 1.7 A, V
= 0 V, V
= V
= 16 V, V
= 15 V, I
= 10 V, R
= 10 V, I
= 4.5 V, I
GEN
10 V R
5 V, V
GS
GS
GS
, I
= 10 V, R
,
= 10 V, I
GS
= 0 V, T
D
D
10 V R
GS
D
GS
10 V I
GS
= 250 A
L
L
D
=
= 3.5 A
= 2.2 A
= 10
= 10 V
= 1 A
= 0 V
= 0 V
10
20 V
J
D
G
= 55 C
= 1.8 A
= 6
1 8 A
6
Min
1.0
14
Typ
0.082
0.12
0.75
6.5
1.2
2.1
12
21
50
7
8
8
S-00652—Rev. L, 27-Mar-00
a
Document Number: 70140
Max
0.10
0.20
100
1.2
25
30
20
20
90
50
100
2
Unit
nC
nA
ns
V
A
S
V
C
A
A