PUMX1 NXP Semiconductors, PUMX1 Datasheet - Page 2

• Manufacturer Part Number: PUMX1
• Description: 58T2164
• Manufacturer: NXP Semiconductors

Specifications of PUMX1

• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
PUMX1_4
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
PUMX1
Type number
PUMX1
Symbol
Per transistor
V
V
V
I
I
I
P
T
T
T
Per device
P
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Package
Name
SC-88
Rev. 04 — 20 January 2010
Description
plastic surface-mounted package; 6 leads
40 V, 100 mA NPN general-purpose double transistor
Conditions
open emitter
open base
open collector
T
T
amb
amb
Marking code
Z*Z
≤ 25 °C
≤ 25 °C
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
50
40
5
100
200
200
200
300
150
+150
+150
PUMX1
Version
SOT363
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
2 of 8