AUIRL7766M2TR1 International Rectifier, AUIRL7766M2TR1 Datasheet - Page 6

• Manufacturer Part Number: AUIRL7766M2TR1
• Description: 54T9033
• Manufacturer: International Rectifier

Specifications of AUIRL7766M2TR1

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 62.5W
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 51 A
• Power Dissipation: 62.5 W
• Gate Charge Qg: 44 nC
• Lead Free Status / Rohs Status: Details

6
1000
100
0.1
10
1
0
Fig 13. Maximum Safe Operating Area
1000
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.001
100
0.1
0.01
10
0.1
1.0E-06
1
10
1E-006
1
V DS , Drain-to-Source Voltage (V)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
DC
1
0.01
0.05
0.10
10msec
D = 0.50
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Duty Cycle = Single Pulse
1msec
0.01
0.02
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
10
1E-005
100μsec
1.0E-05
Fig 16. Typical Avalanche Current vs.Pulsewidth
100
0.0001
1000
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
tav (sec)
0.001
τ
Fig 14. Maximum Avalanche Energy vs. Temperature
J
τ
J
τ
1
Ci= τi/Ri
τ
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Ci
250
200
150
100
i/Ri
50
R
1.0E-03
1
0
R
1
25
τ
2
τ
R
2
2
Starting T J , Junction Temperature (°C)
R
2
0.01
50
R
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
75
τ
R
4
τ
4
R
4
1.0E-02
4
τ
C
τ
Ri (°C/W) τi (sec)
100
0.07641
0.36635
0.94890
1.00767
0.1
TOP
BOTTOM 31A
125
0.0000210
0.0007371
0.0391496
0.0073206
150
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I D
6.7A
17A
1.0E-01
175
1