AUIRL7766M2TR1 International Rectifier, AUIRL7766M2TR1 Datasheet

AUIRL7766M2TR1

Manufacturer Part Number

AUIRL7766M2TR1

Description

54T9033

Manufacturer

International Rectifier

Datasheet

1.AUIRL7766M2TR.pdf (11 pages)

Specifications of AUIRL7766M2TR1

Transistor Polarity

N Channel

Continuous Drain Current Id

51A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

0.008ohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

62.5W

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

10.5 mOhms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

51 A

Power Dissipation

62.5 W

Gate Charge Qg

44 nC

Lead Free Status / Rohs Status

Details

Current page: 1 of 11
Download datasheet (229Kb)

www.irf.com

Applicable DirectFET® Outline and Substrate Outline

HEXFET

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T

•

Description

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

DirectFET®

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET®

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced

platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement

specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature

and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high

current automotive applications.

Thermal Resistance

STG

θJA

θJCan

θJ-PCB

@ T

Advanced Process Technology

Optimized for Automotive DC-DC and

other Heavy Load Applications

Logic Level Gate Drive

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and

Reliability

Lead Free, RoHS Compliant and Halogen Free

Automotive Qualified *

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

) is 25°C, unless otherwise specified.

Automotive DirectFET

AUIRL7766M2TR1

Typ.

12.5

D (Silicon Limited)

–––

1.0

(BR)DSS

DS(on)

See Fig. 18a,18b,16,17

AUIRL7766M2TR

-55 to + 175

Max.

62.5

0.42

100

± 16

204

237

270

2.5

typ.

max.

Power MOSFET ‚

Max.

–––

2.4

DirectFET

DirectFET®

8.0mΩ

10mΩ

ISOMETRIC

44nC

100V

51A

Units

packaging

°C/W

W/°C

03/18/11

°C

The

Related parts for AUIRL7766M2TR1

AUIRL7766M2TR1 Summary of contents

Page 1

... International Rectifier. www.irf.com AUTOMOTIVE GRADE Automotive DirectFET 25°C, unless otherwise specified. A Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Silicon Limited Parameter AUIRL7766M2TR AUIRL7766M2TR1 Power MOSFET ‚ ® V 100V (BR)DSS R typ. 8.0mΩ DS(on) max. 10mΩ I 51A D (Silicon Limited) Q 44nC ® ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) J gfs Forward Transconductance ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 1 2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° 25°C 5 ...

Page 5

150μA 1 250μ 1.0mA 1.0A 1.0 0.5 -75 -50 - 100 125 150 175 Temperature ( °C ) ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100μsec 100 1msec 10msec 25° 175°C Single Pulse 0 100 Drain-to-Source Voltage (V) Fig 13. Maximum Safe ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 31A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE D D www.irf.com ...

Page 9

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations Dimensions are shown in millimeters (inches) DirectFET Part Marking ® Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com "AU" = ...

Page 10

... C … Repetitive rating; pulse width limited by max. junction temperature NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRL7766M2TR). For 1000 parts on 7" reel, order AUIRL7766M2TR1 IMPERIAL STANDARD OPTION (QTY 4800) MIN MAX MAX 0.311 0.319 8.10 CODE 4 ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

Related keywords

AUIRL7766M2TR1 datasheet
AUIRL7766M2TR1 data sheet
AUIRL7766M2TR1 pdf datasheet
AUIRL7766M2TR1 component
AUIRL7766M2TR1 part
AUIRL7766M2TR1 distributor
AUIRL7766M2TR1 RoHS
AUIRL7766M2TR1 datasheet download