BAS16J NXP Semiconductors, BAS16J Datasheet - Page 7
![58T1329](/photos/40/35/403528/ge2sod323f-40_sml.jpg)
BAS16J
Manufacturer Part Number
BAS16J
Description
58T1329
Manufacturer
NXP Semiconductors
Datasheet
1.BAS16J115.pdf
(20 pages)
Specifications of BAS16J
Diode Type
Ultra Fast Recovery
Forward Current If(av)
250mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS16J
Manufacturer:
NXP
Quantity:
30 000
Company:
Part Number:
BAS16J
Manufacturer:
NXP
Quantity:
49 856
Part Number:
BAS16J
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAS16J+115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAS16J,115
Manufacturer:
NXP
Quantity:
49 856
Part Number:
BAS16J,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BAS16_SER_5
Product data sheet
Fig 1.
Fig 3.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
Rev. 05 — 25 August 2008
1.4
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAS16 series
8
2
10
12
© NXP B.V. 2008. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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