BAS16H NXP Semiconductors, BAS16H Datasheet - Page 7
BAS16H
Manufacturer Part Number
BAS16H
Description
58T1328
Manufacturer
NXP Semiconductors
Datasheet
1.BAS16J115.pdf
(20 pages)
Specifications of BAS16H
Diode Type
Ultra Fast Recovery
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Rohs Compliant
Yes
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Part Number
Manufacturer
Quantity
Price
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NXP Semiconductors
BAS16_SER_5
Product data sheet
Fig 1.
Fig 3.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
Rev. 05 — 25 August 2008
1.4
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAS16 series
8
2
10
12
© NXP B.V. 2008. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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