M29W128GL70N6E Micron Technology Inc, M29W128GL70N6E Datasheet - Page 14

• Manufacturer Part Number: M29W128GL70N6E
• Manufacturer: Micron Technology Inc

Specifications of M29W128GL70N6E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Compliant

2.7
2.8
14/94
Write enable (W)
The write enable pin, W, controls the bus write operation of the memory’s command
interface.
V
The V
use an external high voltage power supply to reduce the time required for program
operations. This is achieved by bypassing the unlock cycles.
The write protect function provides a hardware method of protecting the highest or lowest
block (see
block is protected. Program and erase operations on this block are ignored while V
protect is Low.
When V
the highest or lowest block. Program and erase operations can now modify the data in this
block unless the block is protected using block protection.
When V
bypass mode (see
When V
Table 17: Program, erase times and program, erase endurance
When V
bypass program operations the memory draws I
circuits. See the description of the Unlock Bypass command in the command interface
section. The transitions from V
(see
Never raise V
memory may be left in an indeterminate state. A 0.1 μF capacitor should be connected
between the V
from the power supply. The PCB track widths must be sufficient to carry the currents
required during unlock bypass program (see I
characteristics).
The V
pull-up.
Refer to
Table 3.
PP
Figure 24: Accelerated program timing
/write protect (V
PP
PP
V
PP
PP
PP
PP
V
PP
/write protect pin provides two functions. The V
/write protect pin may be left floating or unconnected because it features an internal
Table 3
V
V
PPH
/WP
IH
IL
/write protect is High, V
/write protect is raised to V
/write protect is raised to V
/write protect returns to V
Section 1:
V
PP
PP
PP
/write protect to V
for a summary of V
/write protect pin and the V
/WP functions
Section
Highest block protected on M29W128GH.
Lowest block protected on M29W128GL.
Highest and lowest block unprotected unless a software protection is
activated (see
Unlock bypass mode. It supplies the current needed to speed up
programming.
Description). When V
6.2.6).
PP
IH
/WP)
to V
IH
PPH
Section 4: Hardware
, the memory reverts to the previous protection status of
IH
PP
PPH
PPH
PPH
from any mode except read mode, otherwise the
/WP functions.
or V
, the execution time of the command is lower (see
and from V
the memory automatically enters the unlock
IL
PP
SS
waveforms).
normal operation resumes. During unlock
/write protect is Low, V
PP1
ground pin to decouple the current surges
PP
, I
PP2
from the pin to supply the programming
Function
PPH
protection).
, I
PPH
PP3
to V
, I
function allows the memory to
IH
PP4
must be slower than t
cycles).
in
IL
Table 25: DC
, the highest or lowest
PP
VHVPP
/write