74HCT4316DB,112 NXP Semiconductors, 74HCT4316DB,112 Datasheet - Page 12
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74HCT4316DB,112
Manufacturer Part Number
74HCT4316DB,112
Description
IC SWITCH QUAD 1X1 16SSOP
Manufacturer
NXP Semiconductors
Series
74HCTr
Datasheets
1.74HCT4046ADB112.pdf
(19 pages)
2.74HCT4046ADB112.pdf
(23 pages)
3.74HC4316D653.pdf
(15 pages)
Specifications of 74HCT4316DB,112
Function
Switch
Circuit
4 x 1:1
On-state Resistance
80 Ohm
Voltage Supply Source
Dual Supply
Voltage - Supply, Single/dual (±)
±4.5 V ~ 5.5 V
Current - Supply
16µA
Mounting Type
Surface Mount
Package / Case
16-SSOP (0.200", 5.30mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2871-5
935188740112
935188740112
Philips Semiconductors
ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT
Recommended conditions and typical values
GND = 0 V; T
Notes
1. Adjust input voltage V
2. Adjust input voltage V
General note
V
V
September 1993
V
f
C
SYMBOL
max
is
os
(p-p)
Quad bilateral switches
S
is the input voltage at an nY or nZ terminal, whichever is assigned as an input.
Test conditions:
V
R
is the output voltage at an nY or nZ terminal, whichever is assigned as an output.
CC
L
= 50 ; R
= 4.5 V; GND = 0 V; V
sine-wave distortion
sine-wave distortion
switch “OFF” signal
crosstalk between
crosstalk voltage between
minimum frequency response
maximum switch capacitance
source
amb
f = 1 kHz
f = 10 kHz
feed-through
any two switches
control and any switch
(peak-to-peak value)
( 3 dB)
= 1 k .
= 25 C
PARAMETER
Fig.12 Typical switch “OFF” signal feed-through as a function of frequency.
EE
= 4.5 V;
is
is
to 0 dBm level (0 dBm = 1 mW into 600 ).
to 0 dBm level at V
0.80
0.40
2.40
1.20
110
220
150
160
5
OS
typ.
50
50
60
60
for 1 MHz (0 dBm = 1 mW into 50 ).
%
%
%
%
dB
dB
dB
dB
mV
mV
MHz
MHz
pF
UNIT
12
2.25
4.5
2.25
4.5
2.25
4.5
2.25
4.5
4.5
4.5
2.25
4.5
V
(V)
CC
0
2.25
4.5
2.25
4.5
2.25
4.5
2.25
4.5
4.5
2.25
4.5
V
(V)
EE
4.0
8.0
4.0
8.0
note 1
note 1
note 2
V
is(p-p)
(V)
R
(see Fig.14)
R
(see Fig.14)
R
f = 1 MHz (see Figs 12 and 15)
R
f = 1 MHz; (see Fig.16)
R
f = 1 MHz (E or nS,
square-wave between V
and GND, t
(see Fig.17)
R
(see Figs 13 and 14)
L
L
L
L
L
L
= 10 k ; C
= 10 k ; C
= 600 ; C
= 600 ; C
= 600 k ; C
= 50
74HC/HCT4316
CONDITIONS
; C
Product specification
r
= t
L
L
L
L
L
= 10 pF
f
L
= 50 pF
= 50 pF
= 50 pF
= 50 pF;
= 6 ns)
= 50 pF;
CC