SJEP170R550 SEMISOUTH, SJEP170R550 Datasheet - Page 3

• Manufacturer Part Number: SJEP170R550
• Description: JFET, SIC, N-OFF, 1700V, 4A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP170R550

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1700V
• Power Dissipation Pd: 58W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 4A

SJEP170R550 Rev 1.4
1.00
0.10
0.01
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
9
8
7
6
5
4
3
2
1
0
0
2.0
0
Figure 5. Gate-Source Current
I
I
D
D
= f(V
= f(V
1
V
V
V
DS
GS
I
DS
DS
GS
DS
, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
, Drain-Source Voltage (V)
); T
); T
= f(V
2
j
2.5
j
2
= 175 ° C; parameter: V
= 25 ° C; parameter: V
GS
); parameter: T
3
175
o
4
C
3.0
4
j
GS
GS
5
1.5 V
2.0 V
2.5 V
3.0 V
25
2.5 V
1.5 V
3.0 V
2.0 V
o
C
6
3.5
6
PRELIMINARY
3/7
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
9
8
7
6
5
4
3
2
1
0
0.00
0
0
I
R
D
DS(on)
= f(V
0.50
V
DS
= f(I
GS
V
I
); T
D
2
DS
, Gate-Source Voltage (V)
= f(V
D
, Drain-Source Voltage (V)
); V
150
j
1.00
= 125 ° C; parameter: V
I
D
2
, Drain Current (A)
GS
GS
o
C
SJEP170R550
); V
= 3.0; parameter: Tj
4
1.50
Silicon Carbide
DS
125
= 5 V
o
C
6
2.00
4
25
February 2011
o
GS
C
2.50
8
2.5 V
1.5 V
3.0 V
2.0 V
3.00
10
6