NX2301P,215 NXP Semiconductors, NX2301P,215 Datasheet
NX2301P,215
Manufacturer Part Number
NX2301P,215
Description
Manufacturer
NXP Semiconductors
Datasheet
1.NX2301P215.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NX2301P,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Table 1.
[1]
[2]
Symbol
V
V
I
R
D
DS
GS
DSon
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010
1.8 V R
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
Pulse test: t
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Quick reference data
DSon
p
≤ 300 μs; δ ≤ 0.01.
rated for Low Voltage Gate Drive
T
T
T
Conditions
V
T
V
I
D
amb
amb
amb
j
GS
GS
= 25 °C;
= −1 A
= −4.5 V
= −4.5 V;
= 25 °C
= 25 °C
= 25 °C;
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
100
Product data sheet
Max
−20
±8
−2
120
2
, t ≤ 5 s.
Unit
V
V
A
mΩ
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