933567130112 NXP Semiconductors, 933567130112 Datasheet - Page 2

• Manufacturer Part Number: 933567130112
• Manufacturer: NXP Semiconductors

Specifications of 933567130112

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 10V
• Base-emitter Saturation Voltage (max): 1.5V
• Collector-emitter Saturation Voltage: 1V
• Collector Current (dc) (max): 500mA
• Dc Current Gain: 30000
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: SPT
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complement: BC516.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 05
BC517
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
High current (max. 500 mA)
Low voltage (max. 30 V)
Very high DC current gain (min. 30000).
Where very high amplification is required.
CBO
CES
EBO
tot
NPN Darlington transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
PARAMETER
SC-43A
NAME
plastic single-ended leaded (through hole) package; 3 leads
open emitter
V
open collector
T
amb
BE
= 0 V
25 C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
DESCRIPTION
Fig.1
PACKAGE
PIN
1
2
3
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
emitter
base
collector
65
65
MIN.
DESCRIPTION
Product specification
40
30
10
500
800
100
625
+150
150
+150
MAX.
2
TR1
VERSION
BC517
SOT54
V
V
V
mA
mA
mA
mW
MAM302
C
C
C
TR2
3
1
UNIT