SI4735-D60-GU Silicon Laboratories Inc, SI4735-D60-GU Datasheet - Page 5

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SI4735-D60-GU

Manufacturer Part Number
SI4735-D60-GU
Description
RF RX FM AM SW LW 24 SSOP
Manufacturer
Silicon Laboratories Inc
Series
-r
Datasheet

Specifications of SI4735-D60-GU

Mfg Application Notes
SI47xx Prog Guide AppNote
Frequency
153kHz ~ 279kHz, 520kHz ~ 1.71MHz, 2.3MHz ~ 26.1MHz, 64MHz ~ 108MHz
Sensitivity
-
Data Rate - Maximum
-
Modulation Or Protocol
AM, FM, SW-LW
Applications
General Purpose
Current - Receiving
18.5mA
Data Interface
PCB, Surface Mount
Memory Size
-
Antenna Connector
PCB, Surface Mount
Features
RSSI Equipped
Voltage - Supply
2 V ~ 5.5 V
Operating Temperature
-20°C ~ 85°C
Package / Case
24-SSOP (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-2140

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4735-D60-GU
Manufacturer:
TI
Quantity:
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Part Number:
SI4735-D60-GU
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
Analog Supply Voltage
Digital and I/O Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Notes:
Analog Supply Voltage
Digital and I/O Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at
2. SSOP devices operate down to 2 V at 25 °C. See Section “4.24. 2 V Operation (SSOP Only)” for details.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si473x devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, GPO3, and DCLK.
4. At RF input pins FMI and AMI.
V
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
A
= 3.3 V and 25 C unless otherwise stated.
3
3
Parameter
4
Parameter
1,2
Symbol
T
V
Symbol
V
T
V
V
V
I
STG
DDRISE
OP
IORISE
IN
IN
A
D
Rev. 1.0
V
V
T
1
A
D
A
Test Condition
Si4730/31/34/35-D60
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
IO
+ 0.3)
2.7
1.62
Min
–20
10
10
2
Typ
25
Max
5.5
3.6
85
Unit
mA
V
C
C
V
V
V
pk
Unit
µs
µs
C
V
V
5

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