NX3V1G66GM,115 NXP Semiconductors, NX3V1G66GM,115 Datasheet - Page 10

• Manufacturer Part Number: NX3V1G66GM,115
• Description: IC SWITCH SPST 6XSON
• Manufacturer: NXP Semiconductors

Specifications of NX3V1G66GM,115

• Package / Case: 6-XFDFN
• Function: Switch
• Circuit: 1 x SPST- NO
• On-state Resistance: 250 mOhm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.4 V ~ 4.3 V
• Current - Supply: 150nA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Switch Configuration: SPST
• On Resistance (max): 0.8 Ohm (Typ) @ 1.4 V
• On Time (max): 42 ns @ 1.6 V
• Off Time (max): 22 ns @ 1.6 V
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 1.4 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.00069 mA @ 3.6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4645-2; 935285903115; NX3V1G66GM-G

NXP Semiconductors
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
specified); t
[1]
NX3V1G66
Product data sheet
Symbol Parameter
THD
f

V
Q
(3dB)
Fig 17. Test circuit for measuring total harmonic distortion
iso
ct
inj
f
i
is biased at 0.5V
total harmonic
distortion
3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
charge injection
r
Additional dynamic characteristics
= t
f

12.2 Additional dynamic characteristics
12.3 Test circuits
2.5 ns; T
CC
.
amb
= 25
Conditions
f
R
f
between digital input and switch;
f
f
R

i
i
i
i
C.
= 20 Hz to 20 kHz; R
L
= 100 kHz; R
= 1 MHz; C
= 1 MHz; C
gen
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 50 ; see
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 0 ; see
= 1.4 V; V
= 1.65 V; V
= 2.3 V; V
= 2.7 V; V
= 4.3 V; V
= 1.4 V to 4.3 V
= 1.4 V to 4.3 V
= 1.4 V to 3.6 V
= 3.6 V to 4.3 V
= 1.5 V
= 1.8 V
= 2.5 V
= 3.3 V
= 4.3 V
All information provided in this document is subject to legal disclaimers.
V
IH
f i
L
L
Rev. 6 — 21 December 2010
= 50 pF; R
= 0.1 nF; R
L
Y/Z
Figure 18
Figure 21
= 50 ; see
I
I
I
I
E
= 1 V (p-p)
= 1.5 V (p-p)
= 2 V (p-p)
= 2 V (p-p)
I
= 1.2 V (p-p)
L
V
= 32 ; see
CC
L
L
= 50 ; see
= 1 M; V
Low-ohmic single-pole single-throw analog switch
Figure 19
Z/Y
0.5V
Figure 17
gen
Figure 20
001aah378
CC
R L
= 0 V;
D
I
= GND or V
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NX3V1G66
CC
Typ
0.05
0.03
0.01
0.01
0.01
© NXP B.V. 2010. All rights reserved.
90
0.3
0.5
6.5
6.5
6.5
6.5
25
12
(unless otherwise
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10 of 18
Unit
MHz
pC
pC
pC
pC
pC
dB
%
%
%
%
%
V
V