DP83910AN National Semiconductor, DP83910AN Datasheet - Page 6

• Manufacturer Part Number: DP83910AN
• Description: IC SERIAL NETWRK INT CMOS 24-DIP
• Manufacturer: National Semiconductor

Specifications of DP83910AN

• Applications: Ethernet Network
• Interface: Serial
• Voltage - Supply: 4.75 V ~ 5.25 V
• Package / Case: 24-DIP (0.300", 7.62mm)
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *DP83910AN

Symbol
Controller Interface Pins (COL RXD CRS RXC SEL LBK TXD TXC and TXE)
V
V
I
V
V
I
I
Differential Pins (TX
V
V
V
V
V
Oscillator Pins (X1 and X2)
V
V
I
7 0 Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage (V
DC Input Voltage (V
DC Output Voltage (V
Differential Input Voltage
Differential Output Voltage
Power Dissipation
Storage Temperature
8 0 DC Specifications
Note 1 This measurement was made while the DP83910A was undergoing transmission reception and collision detection Also this value was not measured
instantaneously but averaged over a span of several milliseconds (V
Note 2 This measurement was made while the DP83910A was sitting idle with TXE low Also this value was not measured instantaneously but averaged over a
span of several milliseconds (V
Note 3 This parameter is guaranteed by design and is not tested
IN
CCO
CCS
OSC
IH
IL
OH
OL
OD
OB
U
DS
CM
IH
IL
Input High Voltage
Input Low Voltage
Input Leakage
Output High Voltage
Output Low Voltage
Operating V
Current (Note 1)
Stand By V
Current (Note 2)
Diff Output Voltage (TX
Diff Output Voltage
Imbalance (TX
Undershoot Voltage (TX
Diff Squelch Threshold
(RX
Diff Input Common Mode
Voltage (RX
(Note 3)
X1 Input High Voltage
X1 Input Low Voltage
X1 Input Current
g
CC
and CD
IN
)
Parameter
g
OUT
)
CC
RX
CC
g
IN
)
g
Supply
g
g
and CD
e
Supply
)
)
2 4V or 0 4V and I
and CD
g
T
g
g
)
A
b
b
g
)
)
e
0 5V to V
0 5V to V
)
b
0 C to 70 C V
65 C to
o
b
V
(TTL) I
(CMOS) I
(TTL) I
(CMOS) I
10 Mbit sec
10 Mbit sec
78
270
78
270
78
270
X1 is connected to an oscillator
and X2 is grounded
X1 is connected to an oscillator
and X2 is grounded
X1
X2
b
e
IN
0 5V to
5 5 to
0 mA)
e
e
e
CC
CC
Termination and
Termination and
Termination and
from each to GND (Figure 4)
from each to GND (Figure 4)
from each to GND (Figure 4)
V
GND
0 to 16V
500 mW
a
OH
OL
V
CC
a
a
CC
a
150 C
OH
OL
a
e
0 5V
0 5V
e
IN
16V
or GND
Conditions
or GND
CC
7V
e
e
2 0 mA
2 0 mA
e
2 4V or 0 4V and I
e
20 A
20 A
5V
6
g
which the safety of the device cannot be guaranteed They
are not meant to imply that the device should be operated at
these limits
Lead Temperature (Soldering 10 sec )
ESD (R
Note Absolute maximum ratings are those values beyond
eter has been characterized but not tested
Note All specifications in this datasheet are valid only if the mandatory
isolation is employed and all differential signals are taken to exist at the AUI
side of the pulse transformer
Note An asterisk following a parameter’s symbol indicates that the param-
5%
o
ZAP
e
0 mA)
e
1 5 k
V
CC
g
b
b
Min
b
2 0
3 5
2 0
550
175
b
0
1 0
C
2
ZAP
0 1
e
120 pF)
Typ
100
40
g
b
(Pin 4
Max
a
0 8
1 0
0 4
0 1
1200
5 5
0 8
70
65
300
2
e
1 5 kV)
t
260 C
Units
2 kV
mA
mA
mV
mV
mV
mV
mA
V
V
V
V
V
V
V
V
V
A