MT36VDDF25672Y-335J1 Micron Technology Inc, MT36VDDF25672Y-335J1 Datasheet - Page 16

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MT36VDDF25672Y-335J1

Manufacturer Part Number
MT36VDDF25672Y-335J1
Description
MODULE DDR SDRAM 2GB 184RDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT36VDDF25672Y-335J1

Memory Type
DDR SDRAM
Memory Size
2GB
Speed
333MT/s
Features
-
Package / Case
184-RDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 13:
Table 14:
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
Parameter
Parameter
DC high-level input voltage
DC low-level input voltage
Input voltage (limits)
Input differential-pair cross voltage
Input differential voltage
Input differential voltage
Input current
Dynamic supply current
Dynamic supply current
Dynamic supply current
Input capacitance
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
PLL Specifications
CVF857 device or equivalent JESD82-1A
PLL Clock Driver Timing Requirements and Switching Characteristics
Notes:
1. PLL timing and switching specifications are critical for proper operation of the DDR DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC Standard JESD82-1A.
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
16
Symbol
V
V
I
I
I
ID
ID
DDPD
DD
V
V
ADD
C
V
V
Symbol
I
(
(
IH
IN
IN
IX
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DC
AC
t
Q
slr(i)
t
)
)
L
Register and PLL Specifications
(V
DD
Min
0.36
0.70
–0.3
–0.3
Q/2) - 0.2
–10
1.7
2.0
Min
1.0
2.0
30
0
©2002 Micron Technology, Inc. All rights reserved.
(V
V
V
V
V
DD
DD
DD
DD
DD
Max
Q/2) + 0.2
+10
200
300
Max
Q + 0.3
Q + 0.3
Q + 0.6
Q + 0.6
0.7
3.5
–0.5
12
100
4.0
50
Units
Units
MHz
V/ns
kHz
mA
µA
µA
µA
pF
µs
%
V
V
V
V
V
V

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