MT16JTF51264HZ-1G4M1 Micron Technology Inc, MT16JTF51264HZ-1G4M1 Datasheet - Page 11
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MT16JTF51264HZ-1G4M1
Manufacturer Part Number
MT16JTF51264HZ-1G4M1
Description
MODULE DDR3 SDRAM 4GB 204SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT16JTF25664AZ-1G4G1.pdf
(17 pages)
Specifications of MT16JTF51264HZ-1G4M1
Memory Type
DDR3 SDRAM
Memory Size
4GB
Speed
1333MT/s
Features
-
Package / Case
204-SODIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DRAM Operating Conditions
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
PDF: 09005aef837cdd2d
jtf16c256_512x64az.pdf – Rev. D 5/11 EN
Module Speed Grade
-1G9
-1G6
-1G4
-1G1
-1G0
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
-80C
-80B
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
DRAM Operating Conditions
-187E
-107
-125
-15E
-187
-25E
-25
© 2008 Micron Technology, Inc. All rights reserved.