MT16JTF51264HZ-1G4M1 Micron Technology Inc, MT16JTF51264HZ-1G4M1 Datasheet

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MT16JTF51264HZ-1G4M1

Manufacturer Part Number
MT16JTF51264HZ-1G4M1
Description
MODULE DDR3 SDRAM 4GB 204SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT16JTF51264HZ-1G4M1

Memory Type
DDR3 SDRAM
Memory Size
4GB
Speed
1333MT/s
Features
-
Package / Case
204-SODIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR3 SDRAM UDIMM
MT16JTF25664AZ – 2GB
MT16JTF51264AZ – 4GB
Features
• DDR3 functionality and operations supported as per
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC3-14900, PC3-12800,
• 2GB (256 Meg x 64), 4GB (512 Meg x 64)
• V
• V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
• Dual rank
• 8 internal device banks for concurrent operation
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Halogen-free
• Addresses are mirrored for second rank
• Fly-by topology
• Terminated control, command, and address bus
Table 1: Key Timing Parameters
PDF: 09005aef837cdd2d
jtf16c256_512x64az.pdf – Rev. D 5/11 EN
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Speed
Grade
-1G9
-1G6
-1G4
-1G1
-1G0
component data sheet
(UDIMM)
PC3-10600, PC3-8500, or PC3-6400
data, strobe, and mask signals
via the mode register
-80B
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
DD
DDSPD
= V
Nomenclature
DDQ
= 3.0V to 3.6V
PC3-14900
PC3-12800
PC3-10600
Industry
PC3-8500
PC3-8500
PC3-6400
= 1.5V ±0.75V
CL = 13 CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5
1866
1600
1333
1333
1333
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Data Rate (MT/s)
1333
1333
1
1066
1066
1066
1066
1066
Figure 1: 240-Pin UDIMM (MO-269 R/C B)
Module Height: 30.0mm (1.181 in.)
Options
• Operating temperature
• Package
• Frequency/CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
Note:
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1066
1066
1066
1. Contact Micron for industrial temperature
module offerings.
800
800
800
800
800
800
667
667
667
667
667
1
A
A
≤ +85°C)
≤ +70°C)
© 2008 Micron Technology, Inc. All rights reserved.
13.125 13.125 48.125
13.125 13.125 49.125
13.125 13.125 50.625
13.91
t
(ns)
RCD
15
15
13.91
(ns)
t
Marking
15
15
RP
Preliminary
Features
None
-1G9
-1G6
-1G4
-1G1
Z
I
47.91
(ns)
52.5
52.5
t
RC

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MT16JTF51264HZ-1G4M1 Summary of contents

Page 1

DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB Features • DDR3 functionality and operations supported as per component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500, or PC3-6400 ...

Page 2

Table 2: Addressing Parameter Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 2GB 1 Base device: MT41J128M8, 1Gb DDR3 SDRAM Module ...

Page 3

Pin Assignments Table 5: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ25 61 REFDQ DQ0 ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O TDQSx, Output TDQSx# Err_Out# Output (open drain) EVENT# Output (open drain) V Supply DD V Supply DDSPD V Supply REFCA V Supply REFDQ V Supply SS V Supply TT – NC ...

Page 6

DQ Map Table 7: Component-to-Module DQ Map Component Reference Component Number DQ Module ...

Page 7

Table 7: Component-to-Module DQ Map (Continued) Component Reference Component Number DQ Module DQ U10 U12 U14 ...

Page 8

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1# DQS1 DM1 DM DQ8 DQ DQ9 ...

Page 9

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 10

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...

Page 11

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's mem- ory bus to ensure adequate signal integrity of the entire memory system ...

Page 12

I Specifications DD Table 11: DDR3 I Specifications and Conditions – 2GB (All Die Revisions) DD Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet ...

Page 13

Table 12: DDR3 I Specifications and Conditions – 4GB (Die Revision D) DD Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Operating current ...

Page 14

Table 13: DDR3 I Specifications and Conditions – 4GB (Die Revision H) DD Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Operating current ...

Page 15

Table 14: DDR3 I Specifications and Conditions – 4GB (Die Revision M) DD Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Operating current ...

Page 16

Serial Presence-Detect EEPROM For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 15: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V DDSPD Parameter/Condition Supply voltage Input low voltage: Logic 0; All inputs Input high ...

Page 17

Module Dimensions Figure 3: 240-Pin DDR3 UDIMM 0.9 (0.035) TYP 0.50 (0.02) R (4X 0.75 (0.03) R (8X) 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.20 (0.087) TYP 1.45 (0.057) TYP 54.68 (2.15) TYP 15.0 (0.59) ...

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