MT8VDDT6464HDY-40BJ1 Micron Technology Inc, MT8VDDT6464HDY-40BJ1 Datasheet

MT8VDDT6464HDY-40BJ1

Manufacturer Part Number

MT8VDDT6464HDY-40BJ1

Description

MODULE DDR SDRAM 512MB 200SODIMM

Manufacturer

Micron Technology Inc

Series

-r

Datasheets

1.MT8VDDT6464HDY-40BJ1.pdf (13 pages)

2.MT8VDDT6464HDY-40BJ1.pdf (30 pages)

Specifications of MT8VDDT6464HDY-40BJ1

Memory Type

DDR SDRAM

Memory Size

512MB

Speed

400MT/s

Features

Package / Case

200-SODIMM

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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DDR SDRAM

UNBUFFERED DIMM

Features

• 184-pin dual in-line memory module (DIMM)

• Fast data transfer rates: PC2100 or PC2700

• Utilizes 266 MT/s and 333 MT/s DDR SDRAM

• 128MB (16 Meg x 64), 256MB (32 Meg x 64), and

• V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• Internal, pipelined double data rate (DDR)

• Bidirectional data strobe (DQS) transmitted/

• Differential clock inputs (CK and CK#)

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Auto Refresh and Self Refresh Modes

• 15.625µs (128MB), 7.8125µs (256MB, 512MB)

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Gold edge contacts

Table 1:

pdf: 09005aef80867ab3, source: 09005aef80867a99

DD8C16_32_64x64AG.fm - Rev. G 9/04 EN

Refresh Count

Row Addressing

Device Bank Addressing

Device Configuration

Column Addressing

Module Rank Addressing

components

512MB (64 Meg x 64)

aligned with data for WRITEs

architecture; two data accesses per clock cycle

received with data—i.e., source-synchronous data

capture

maximum average periodic refresh interval

DDSPD

= V

= +2.3V to +3.6V

Q = +2.5V

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

Address Table

128Mb (16 Meg x 8)

4 (BA0, BA1)

4K (A0–A11)

1K (A0–A9)

128MB

1 (S0#)

NOTE:

MT8VDDT1664A – 128MB

MT8VDDT3264A – 256MB

MT8VDDT6464A – 512MB

For the latest data sheet, please refer to the Micron

site:

OPTIONS

• Package

• Memory Clock/Speed, CAS Latency

• PCB

Standard 1.25in. (31.75mm)

Low-Profile 1.15in. (29.21mm)

128MB, 256MB, 512MB (x64, SR)

184-pin DIMM (standard)

184-pin DIMM (lead-free)

6ns (167 MHz), 333 MT/s, CL = 2.5

7.5ns (133 MHz), 266 MT/s, CL = 2

7.5ns (133 MHz), 266 MT/s, CL = 2.5

Standard 1.25in. (31.75mm)

Low-Profile 1.15in. (29.21mm)

Figure 1: 184-Pin DIMM (MO-206)

www.micron.com/products/modules

184-PIN DDR SDRAM UDIMM

1. Consult Micron for product availability.

2. CL = CAS (READ) Latency

256Mb (32 Meg x 8)

8K (A0–A12)

4 (BA0, BA1)

1K (A0–A9)

256MB

1 (S0#)

512Mb (64 Meg x 8)

2K (A0–A9, A11)

4 (BA0, BA1)

8K (A0–A12)

See page 2 note

512MB

1 (S0#)

MARKING

-26A

-262

-335

-265

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