MT8HTF12864HDZ-800H1 Micron Technology Inc, MT8HTF12864HDZ-800H1 Datasheet - Page 9
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MT8HTF12864HDZ-800H1
Manufacturer Part Number
MT8HTF12864HDZ-800H1
Description
MODULE DDR2 SDRAM 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Specifications of MT8HTF12864HDZ-800H1
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
800MT/s
Features
-
Package / Case
200-SODIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
V
Symbol
IN
I
V
VREF
T
, V
I
T
OZ
I
DD
C
A
I
1
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQ and ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component operating tem-
perature
DD
DD
REF
; V
supply voltage relative to V
leakage current; V
REF
Notes:
2
input 0V ≤ V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
IN
REF
≤ 0.95V; (All other
= valid V
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
OUT
SS
SS
REF
≤ V
level
DDQ
IN
≤
;
Address inputs, RAS#, CAS#,
WE#, S#, CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–0.5
–0.5
–40
–20
–10
–10
–16
–40
–40
0
0
© 2006 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
40
20
10
10
16
70
85
85
95
Units
µA
µA
µA
°C
°C
°C
°C
V
V