MT8HTF12864HDZ-800H1 Micron Technology Inc, MT8HTF12864HDZ-800H1 Datasheet

MT8HTF12864HDZ-800H1

Manufacturer Part Number

MT8HTF12864HDZ-800H1

Description

MODULE DDR2 SDRAM 1GB 200SODIMM

Manufacturer

Micron Technology Inc

Series

-r

Datasheets

1.MT8HTF12864HDZ-800H1.pdf (13 pages)

2.MT8HTF12864HDZ-800H1.pdf (19 pages)

Specifications of MT8HTF12864HDZ-800H1

Memory Type

DDR2 SDRAM

Memory Size

1GB

Speed

800MT/s

Features

Package / Case

200-SODIMM

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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DDR2 SDRAM SODIMM

MT8HTF3264HDY – 256MB

MT8HTF6464HDY – 512MB

MT8HTF12864HDY – 1GB

Features

• 200-pin, small-outline dual in-line memory module

• Fast data transfer rates: PC2-3200, PC2-4200,

• 256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB

• V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Multiple internal device banks for concurrent opera-

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Serial presence detect (SPD) with EEPROM

• Gold edge contacts

• Dual rank

Table 1: Key Timing Parameters

PDF: 09005aef80ebed66

htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN

(SODIMM)

PC2-5300, or PC2-6400

(128 Meg x 64)

tion

Speed

Grade

DDSPD

-80E

-800

-667

-53E

-40E

= 1.8V

= 1.7–3.6V

Products and specifications discussed herein are subject to change by Micron without notice.

Nomenclature

Industry

PC2-6400

PC2-5300

PC2-4200

PC2-3200

CL = 6

800

–

256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM

CL = 5

Data Rate (MT/s)

800

667

–

Figure 1: 200-Pin SODIMM (MO-224 R/C A)

Module height: 30mm (1.18in)

CL = 4

Options

• Operating temperature

• Package

• Frequency/CL2

533

553

400

Notes:

– Commercial (0°C ≤ T

– Industrial (–40°C ≤ T

– 200-pin DIMM (lead-free)

– 2.5ns @ CL = 5 (DDR2-800)

– 2.5ns @ CL = 6 (DDR2-800)

– 3.0ns @ CL = 5 (DDR2-667)

– 3.75ns @ CL = 4 (DDR2-553)

– 5.0ns @ CL = 3 (DDR2-400)

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1. Contact Micron for industrial temperature

2. CL = CAS (READ) latency.

3. Not recommended for new designs.

CL = 3

400

module offerings.

(ns)

12.5

RCD

≤ +85°C)

≤ +70°C)

(ns)

12.5

Features

Marking

-80E

-53E

-40E

-800

-667

(ns)

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