BD8314NUV-E2 Rohm Semiconductor, BD8314NUV-E2 Datasheet - Page 7

• Manufacturer Part Number: BD8314NUV-E2
• Description: IC SWITCHING REG W/MOSFET SON10
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Step-Up (Boost), PWMr

Specifications of BD8314NUV-E2

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 4 V ~ 12 V
• Current - Output: 2.5A
• Frequency - Switching: 1.2MHz
• Voltage - Input: 3 V ~ 12 V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-VFDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

●Example of Application Input: 3.0 to 10 V, output: 10 V / 500 mA
●Reference Application Data 1
BD8314NUV
© 2010 ROHM Co., Ltd. All rights reserved.
www.rohm.com
10V/500mA
100
80
60
40
20
Fig.20 Power conversion efficiency 1
15
14
13
12
11
10
0
9
8
7
6
5
1
0
VCC=10V
Fig.23 Line regulation
200k
2
22k
OUTPUT CURRENT [mA]
10
VCC=8.4V
INPUT VOLTAGE [V]
4
Io=100mA
100
100k
10p
6
Io=500mA
10k
VCC=7.4V
22μF
GRM32EB31C226KE16 (Murata)
8
1000
ON/OFF
10
10000
12
10
6
7
8
9
Fig.19 Reference application diagram
100
INV
SWOUT
RSX201L-30 (ROHM)
PGND
PGND
STB
80
60
40
20
Fig.21 Power conversion efficiency 2
0
10.5
10.4
10.3
10.2
10.1
10.0
9.9
9.8
9.7
9.6
9.5
1
VCC=6.0V
1
Fig.24 Load regulation 1
OUTPUT CURRENT [mA]
10
VCC=4.8V
OUTPUT CURRENT [mA]
10
7/15
100
100
VCC=10V
VCC=6.0V
VREG
GND
VCC
1000
Lx
Lx
1000
VCC=8.4V
VCC=7.4V
5
4
3
2
1
10000
10000
1μF
GRM188B11A105KA61(Murata)
100
80
60
40
20
10.5
10.4
10.3
10.2
10.1
10.0
0
9.9
9.8
9.7
9.6
9.5
GRM21BB11C105KA01(Murata)
Fig.22 Power conversion efficiency 3
1
1μF
1
VCC=4.0V
Fig.25 Load regulation 2
4.7μH
DE3518E(TOKO)
OUTPUT CURRENT [mA]
10
OUTPUT CURRENT [mA]
VCC=3.5V
10
VCC=3.5V
GRM31CB31E106KA75L(Murata)
Technical Note
100
2010.11 - Rev.C
100
10μF
VCC=4.8V
VCC=4.0V
1000
1000
VBAT=2.5～4.5V
3.3～5.0V
10000
10000