BD8314NUV-E2 Rohm Semiconductor, BD8314NUV-E2 Datasheet - Page 14

• Manufacturer Part Number: BD8314NUV-E2
• Description: IC SWITCHING REG W/MOSFET SON10
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Step-Up (Boost), PWMr

Specifications of BD8314NUV-E2

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 4 V ~ 12 V
• Current - Output: 2.5A
• Frequency - Switching: 1.2MHz
• Voltage - Input: 3 V ~ 12 V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-VFDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

●Notes for Use
BD8314NUV
© 2010 ROHM Co., Ltd. All rights reserved.
www.rohm.com
1) Absolute Maximum Rating
2) GND Potential
3) Thermal Design
4) Short Circuit between Pins and Incorrect Mounting
5) Operation under Strong Electromagnetic Field
6) Common Impedance
7) Thermal Protection Circuit (TSD Circuit)
8) Rush Current at the Time of Power Activation
9) IC Terminal Input
We dedicate much attention to the quality control of these products, however the possibility of deterioration or destruction
exists if the impressed voltage, operating temperature range, etc., exceed the absolute maximum ratings. In addition, it is
impossible to predict all destructive situations such as short-circuit modes, open circuit modes, etc. If a special mode
exceeding the absolute maximum rating is expected, please review matters and provide physical safety means such as
fuses, etc.
Keep the potential of the GND pin below the minimum potential at all times.
Work out the thermal design with sufficient margin taking power dissipation (Pd) in the actual operation condition into
account.
Attention to IC direction or displacement is required when installing the IC on a PCB. If the IC is installed in the wrong
way, it may break. Also, the threat of destruction from short-circuits exists if foreign matter invades between outputs or the
output and GND of the power supply.
Be careful of possible malfunctions under strong electromagnetic fields.
When providing a power supply and GND wirings, show sufficient consideration for lowering common impedance and
reducing ripple (i.e., using thick short wiring, cutting ripple down by LC, etc.) as much as you can.
runaway and does not aim to protect or assure operation of the IC itself. Therefore, do not use the TSD circuit for
continuous use or operation after the circuit has tripped.
Be careful of the power supply coupling capacity and the width of the power supply and GND pattern wiring and routing
since rush current flows instantaneously at the time of power activation in the case of CMOS IC or ICs with multiple
power supplies.
This is a monolithic IC and has P+ isolation and a P substrate for element isolation between each element. P-N junctions
are formed and various parasitic elements are configured using these P layers and N layers of the individual elements.
For example, if a resistor and transistor are connected to a terminal as shown on Fig.37:
The parasitic element consequently rises under the potential relationship because of the IC’s structure. The parasitic
element pulls interference that could cause malfunctions or destruction out of the circuit. Therefore, use caution to avoid
the operation of parasitic elements caused by applying voltage to an input terminal lower than the GND (P board), etc.
(Pin A)
○The P-N junction operates as a parasitic diode
○Also, a parasitic NPN transistor operates using the N layer of another element adjacent to the previous diode in the
N
This IC contains a thermal protection circuit (TSD circuit). The TSD circuit serves to shut off the IC from thermal
Parasitic
Element
when GND > (Terminal A) in the case of a resistor or when GND > (Pin B) in the case of a transistor (NPN)
case of a transistor (NPN) when GND > (Pin B).
P
+
Resistor
N
P Substrate
P
GND
Fig.37 Example of simple structure of Bipolar IC
P
+
N
(Pin B)
Parasitic Element
N
P
+
C
Transistor (NPN)
14/15
P Substrate
B
N
N
P
GND
E
P
+
N
GND
(Pin A)
GND
Technical Note
2010.11 - Rev.C
Parasitic Element