PC28F128J3D75D Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., PC28F128J3D75D Datasheet - Page 38

• Manufacturer Part Number: PC28F128J3D75D
• Description: IC FLASH 128MBIT 75NS 64EZBGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: -r

Specifications of PC28F128J3D75D

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 872831; 872831TR; 872831TR; PC28F128J3D75 S L8QU; PC28F128J3D75D; PC28F128J3D75DTR

Note:
9.2.2
9.2.3
9.2.4
9.3
Datasheet
38
Issuing the Read Array command to the device while it is actively programming or
erasing causes subsequent reads from the device to output invalid data. Valid array
data is output only after the program or erase operation has finished.
The Read Array command functions independent of the voltage level on VPEN.
Read Status Register
Issuing the Read Status Register command places the device in Read Status Register
mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8]. The device remains in Read Status Register mode until a different read-
mode command is issued. Performing a program, erase, or block-lock operation also
changes the device’s read mode to Read Status Register mode.
The Status Register is updated on the falling edge of CE, or OE# when CE is active.
Status Register contents are valid only when SR.7 = 1. When WSM is active, SR.7
indicates the WSM’s state and SR[6:0] are in high-Z state.
The Read Status Register command functions independent of the voltage level on
VPEN.
Read Device Information
Issuing the Read Device Information command places the device in Read Device
Information mode. Subsequent reads output device information on DQ[15:0].
The device remains in Read Device Information mode until a different read command is
issued. Also, performing a program, erase, or block-lock operation changes the device
to Read Status Register mode.
The Read Device Information command functions independent of the voltage level on
VPEN.
CFI Query
The CFI query table contains an assortment of flash product information such as block
size, density, allowable command sets, electrical specifications, and other product
information. The data contained in this table conforms to the (CFI) protocol.
Issuing the CFI Query command places the device in CFI Query mode. Subsequent
reads output CFI information on DQ[15:0]. The device remains in CFI Query mode until
a different read command is issued, or a program or erase operation is performed,
which changes the read mode to Read Status Register mode.
The CFI Query command functions independent of the voltage level on VPEN.
Programming Operations
All programming operations require the addressed block to be unlocked, and a valid
VPEN voltage applied throughout the programming operation. Otherwise, the
programming operation will abort, setting the appropriate Status Register error bit(s).
The following sections describe each programming method.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
December 2007
316577-06