MT41J512M4HX-125:D Micron Technology Inc, MT41J512M4HX-125:D Datasheet - Page 66
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT41J512M4HX-125:D
Manufacturer Part Number
MT41J512M4HX-125:D
Description
IC DDR3 SDRAM 2GBIT 78FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT41J256M8JE-187EA.pdf
(181 pages)
Specifications of MT41J512M4HX-125:D
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (512M x 4)
Speed
800MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT41J512M4HX-125:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Speed Bin Tables
Table 52:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
DDR3-800 Speed Bin
CL-
Parameter
ACTIVATE to internal READ or WRITE delay
time
PRECHARGE command period
ACTIVATE-to-ACTIVATE or REFRESH
command period
ACTIVATE-to-PRECHARGE command period
CL = 5
CL = 6
Supported CL settings
Supported CWL settings
t
RCD-
t
RP
DDR3-800 Speed Bins
Notes:
CWL = 5
CWL = 5
1.
2. The CL and CWL settings result in
3. Reserved settings are not allowed.
t
CL and CWL requirement settings need to be fulfilled.
REFI depends on T
t
t
CK (AVG)
CK (AVG)
Symbol
t
t
RCD
OPER
t
t
RAS
RP
RC
.
66
Min
12.5
12.5
37.5
2.5
2.5
50
t
CK requirements. When making a selection of
5-5-5
-25E
5, 6
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
60ms
Max
3.3
3.3
–
–
–
2Gb: x4, x8, x16 DDR3 SDRAM
Min
52.5
37.5
3.0
2.5
15
15
6-6-6
5, 6
-25
5
©2006 Micron Technology, Inc. All rights reserved.
60ms
Max
3.3
3.3
–
–
–
Speed Bin Tables
Units
CK
CK
ns
ns
ns
ns
ns
ns
t
CK, both
Notes
2, 3
1
2
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