MT41J512M4HX-125:D Micron Technology Inc, MT41J512M4HX-125:D Datasheet - Page 180

• Manufacturer Part Number: MT41J512M4HX-125:D
• Description: IC DDR3 SDRAM 2GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J512M4HX-125:D

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (512M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 119: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
Figure 120: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
Command
Command
CKE
C K E
CK#
CK#
CK
CK
NOP
REF
T0
T0
Notes:
Notes:
NOP
NOP
T1
T1
1. AL = 0, WL = 5,
1. AL = 0, WL = 5,
NOP
NOP
NOP
T2
T2
Short CKE HIGH transition period (R
t ANPD
t ANPD
NOP
NOP
T3
T3
Short CKE LOW transition period (R
t
t
ANPD = 4.
ANPD = 4.
NOP
NOP
T4
T4
NOP
NOP
TT
T5
T5
change asynchronous or synchonous)
NOP
NOP
T6
T6
PDE transition period
TT
change asynchronous or synchronous)
t RFC (MIN)
t ANPD
t ANPD
NOP
NOP
T7
T7
t XPDLL
PDX transition period
NOP
NOP
T8
T8
NOP
NOP
T9
T9
Indicates a Break in
Time Scale
Indicates A Break in
Time Scale
Ta0
Ta0
NOP
NOP
t XPDLL
NOP
Ta1
NOP
Ta1
Transitioning
Transitioning
NOP
Ta2
NOP
Ta2
NOP
NOP
Ta3
Ta3
Don’t Care
Don’t Care
NOP
Ta4
NOP
Ta4