MT41J128M8JP-15E:G Micron Technology Inc, MT41J128M8JP-15E:G Datasheet - Page 51

• Manufacturer Part Number: MT41J128M8JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR3 SDRAMr

Specifications of MT41J128M8JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 31:
Table 32:
ODT Timing Definitions
Figure 25: ODT Timing Reference Load
Table 33:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Symbol
Symbol
t
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
R
TT
point of ODTL
Rising edge of CK - CK# with ODT first being
Rising edge of CK - CK# with ODT first being
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
ODT Sensitivity Definition
ODT Temperature and Voltage Sensitivity
ODT Timing Definitions
0.9 - dR
Notes:
Notes:
Begin Point Definition
TT
point of ODTL off
point of ODTL on
dT × |DT| - dR
CNW
registered HIGH
registered LOW
1. ΔT = T - T(@ calibration), ΔV = V
1. ΔT = T - T(@ calibration), ΔV = V
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 25. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another
defines when ODT turns on or off dynamically. Table 33 outlines and provides definition
and measurement reference settings for each parameter (see Figure 34 on page 52).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
CK, CK#
, ODTL
Min
CWN
Change
dR
dR
TT
TT
TT
4, or ODTL
dV × |DV|
DUT
TDQS, TDQS#
dV
dT
DQS, DQS#
ZQ
DQ, DM
V
REF
CWN
V
DD
8
RZQ = 240Ω
Q/2
R
Timing reference point
51
1.6 + dR
TT
Extrapolated points at V
= 25Ω
Extrapolated point at V
Extrapolated point at V
DD
DD
Extrapolated point at V
Extrapolated point at V
Q - V
Q - V
Min
End Point Definition
0
0
TT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
dT × |DT| + dR
DD
DD
V
V
Q(@ calibration) and V
Q(@ calibration) and V
TT
SS
V
Q
RTT
Max
= V
_
SS
NOM
Q
1Gb: x4, x8, x16 DDR3 SDRAM
TT
RTT
dV × |DV|
RTT
RTT
Max
0.15
_
1.5
SS
SS
_
_
WR
NOM
NOM
Q
Q
and
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
DD
DD
= V
= V
Figure 26 on page 52
Figure 26 on page 52
Figure 27 on page 53
Figure 27 on page 53
Figure 28 on page 53
DD
DD
RZQ/(2, 4, 6, 8, 12)
Q.
Q.
Figure
Units
%/mV
Units
%/°C