MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 5
![IC SDRAM 256MB 166MHZ 90VFBGA](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-6:H
Manufacturer Part Number
MT46H8M32LFB5-6:H
Description
IC SDRAM 256MB 166MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR SDRAMr
Specifications of MT46H8M32LFB5-6:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H8M32LFB5-6:H
Manufacturer:
ST
Quantity:
34 600
Company:
Part Number:
MT46H8M32LFB5-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: VFBGA Ball Descriptions .................................................................................................................. 13
Table 3: Absolute Maximum Ratings .............................................................................................................. 17
Table 4: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 17
Table 5: Capacitance (x16, x32) ...................................................................................................................... 19
Table 6: I
Table 7: I
Table 8: I
Table 9: Electrical Characteristics and Recommended AC Operating Conditions ............................................. 24
Table 10: Target Output Drive Characteristics (Full Strength) .......................................................................... 29
Table 11: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 30
Table 12: Target Output Drive Characteristics (One-Half Strength) ................................................................. 31
Table 13: Truth Table – Commands ............................................................................................................... 33
Table 14: DM Operation Truth Table ............................................................................................................. 34
Table 15: Truth Table – Current State Bank n – Command to Bank n ............................................................... 40
Table 16: Truth Table – Current State Bank n – Command to Bank m .............................................................. 41
Table 17: Truth Table – CKE .......................................................................................................................... 44
Table 18: Burst Definition Table .................................................................................................................... 50
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
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DD
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6 Specifications and Conditions ................................................................................................... 22
Specifications and Conditions (x16) ............................................................................................ 20
Specifications and Conditions (x32) ............................................................................................ 21
5
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.