BF1005E6327XT Infineon Technologies, BF1005E6327XT Datasheet - Page 6

• Manufacturer Part Number: BF1005E6327XT
• Manufacturer: Infineon Technologies
• Type: RF MOSFETr

Specifications of BF1005E6327XT

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±13V
• Continuous Drain Current: 25mA
• Power Dissipation: 200mW
• Frequency (max): 1GHz
• Noise Figure: 2.5dB
• Power Gain: 19dB
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-143
• Channel Type: N
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 19@5VdB
• Noise Figure (max): 2.5dB
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1pF
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8
0.2
+0.1
-0.05
Pin 1
Package SOT143
2.9
4
1.9
1.7
1
RF s
±0.1
4
0.8
3
3.15
2
0.4
1.2
0.8
1.2
+0.1
-0.05
B
6
0.8
0.25
0.8
M
Manufacturer
2005, June
Date code (YM)
BFP181
Type code
B
0.2
1.15
0.2
M
A
1
0.1 MAX.
±0.1
A
BF1005...
2007-04-20