BF1005E6327XT Infineon Technologies, BF1005E6327XT Datasheet

BF1005E6327XT

Manufacturer Part Number
BF1005E6327XT
Description
Manufacturer
Infineon Technologies
Type
RF MOSFETr
Datasheet
1.BF1005E6327XT.pdf (8 pages)

Specifications of BF1005E6327XT

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-volt
8V
Gate-source Voltage (max)
±13V
Continuous Drain Current
25mA
Power Dissipation
200mW
Frequency (max)
1GHz
Noise Figure
2.5dB
Power Gain
19dB
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-143
Channel Type
N
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
19@5VdB
Noise Figure (max)
2.5dB
Forward Transconductance (typ)
0.024S
Input Capacitance (typ)@vds
2.1@5V@Gate 1pF
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Silicon N-Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF1005
BF1005R
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
Storage temperature
Channel temperature
1
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Pb-containing package may be available upon special request
S
For low noise, high gain controlled
Operating voltage 5V
Integrated biasing network
Pb-free (RoHS compliant) package
Qualified according AEC Q101
input stages up to 1 GHz
AGC
Input
76 °C
RF
G2
G1
Package
SOT143
SOT143R
GND
Drain
1=S
1=D
RF Output
+ DC
1)
2=D
2=S
1
Pin Configuration
3=G2
3=G1
Symbol
V
I
+V
P
T
T
D
I
stg
ch
DS
tot
G1/2SM
G1SE
4=G1
4=G2
-
-
-55 ... 150
Value
200
150
25
10
8
3
-
-
BF1005...
2007-04-20
Marking
MZs
MZs
Unit
V
mA
V
mW
°C

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BF1005E6327XT Summary of contents

Page 1

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package Qualified according AEC Q101 G2 AGC G1 RF Input GND ESD (Electrostatic discharge) sensitive ...

Page 2

Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 650 µ G1S G2S Gate1-source breakdown voltage + mA ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance 4 G2S Gate1 input capacitance MHz DS G2S ...

Page 4

Total power dissipation P BF1005, BF1005R 220 mW 180 160 140 120 100 Drain current G2S ...

Page 5

Forward transfer admittance | G2S 0.5 1 1.5 2 2.5 Output capacitance C dss f = 200MHz 3 pF 2.4 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

Page 7

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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