MT47H128M8HQ-3E:E TR Micron Technology Inc, MT47H128M8HQ-3E:E TR Datasheet - Page 28

• Manufacturer Part Number: MT47H128M8HQ-3E:E TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H128M8HQ-3E:E TR

• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table 10: DDR2 Idd Specifications and Conditions (Die Revisions E and G)
Notes: 1–7 apply to the entire table
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter/Condition
Operating one bank active-
precharge current:
t
t
CS# is HIGH between valid com-
mands; Address bus inputs are
switching; Data bus inputs are
switching
Operating one bank active-read-
precharge current: Iout = 0mA;
BL = 4, CL = CL (Idd), AL = 0;
t
t
CKE is HIGH, CS# is HIGH between
valid commands; Address bus in-
puts are switching; Data pattern is
same as Idd4W
Precharge power-down current:
All banks idle;
is LOW; Other control and address
bus inputs are stable; Data bus in-
puts are floating
Precharge quiet standby
current: All banks idle;
t
HIGH; Other control and address
bus inputs are stable; Data bus in-
puts are floating
Precharge standby current: All
banks idle;
HIGH, CS# is HIGH; Other control
and address bus inputs are switch-
ing; Data bus inputs are switching
Active power-down current: All
banks open;
LOW; Other control and address
bus inputs are stable; Data bus in-
puts are floating
CK =
RAS =
CK (Idd),
RAS MIN (Idd),
CK =
t
t
CK (Idd),
CK (Idd); CKE is HIGH, CS# is
t
RAS MIN (Idd); CKE is HIGH,
t
RC =
t
CK =
t
CK =
t
CK =
t
t
t
RC (Idd),
RC =
RCD =
t
CK (Idd); CKE is
t
CK (Idd); CKE is
t
CK (Idd); CKE
t
RC (Idd),
t
RCD (Idd);
t
RAS =
t
CK =
Symbol
Idd3Pf
Idd3Ps
Idd2Q
Idd2N
Idd2P
Idd0
Idd1
Configuration
x4, x8, x16
MR12 = 0
MR12 = 1
Slow exit
Fast exit
x4, x8
x4, x8
x4, x8
x4, x8
x16
x16
x16
x16
28
Electrical Specifications – Idd Parameters
-187E
115
180
130
210
60
90
60
95
50
10
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
-25E/
150
110
175
-25
90
50
75
50
80
40
10
7
1Gb: x4, x8, x16 DDR2 SDRAM
-3E/
135
100
130
85
40
65
40
70
30
10
-3
7
© 2004 Micron Technology, Inc. All rights reserved.
-37E
110
120
70
95
40
45
40
50
30
10
7
110
115
-5E
70
90
35
40
35
40
30
10
7
Units
mA
mA
mA
mA
mA
mA