MT47H128M8HQ-3E:E TR Micron Technology Inc, MT47H128M8HQ-3E:E TR Datasheet - Page 22
MT47H128M8HQ-3E:E TR
Manufacturer Part Number
MT47H128M8HQ-3E:E TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-3EE_TR.pdf
(135 pages)
Specifications of MT47H128M8HQ-3E:E TR
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#,
CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V, Vref = Vss, f = 100
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, Vout(DC) = VddQ/2, Vout (peak-to-peak) = 0.1V. DM input is grouped
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
Symbol Min Max Units Notes
Cdck
Cdio
Cck
Cdi
Cio
Ci
© 2004 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
0.25
0.25
2.0
2.0
4.0
0.5
Packaging
pF
pF
pF
pF
pF
pF
2, 3
1, 4
2, 3
1, 5
2, 3
1
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