DTA114EUBTL Rohm Semiconductor, DTA114EUBTL Datasheet - Page 2

no-image

DTA114EUBTL

Manufacturer Part Number
DTA114EUBTL
Description
TRAN DIGITL PNP 50V 100MA UMT3F
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of DTA114EUBTL

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTA114EUBTL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
DTA114EUB
∗ Characteristics of built-in transistor
Fig.4 Output voltage vs. output current
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Fig.1 Input voltage vs. output current
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
−500m
−200m
−100m
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
−100µ
−5
−2
−1
−100µ
−1
(ON characteristics)
−200µ −500µ
−200µ
Parameter
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500µ
100°C
25°C
−1m
−1m
−2m
−2m
Ta=100°C
−40°C
25°C
−5m
−5m
−10m
−10m
Symbol
O
O
−20m
−20m
R
V
(A)
(A)
V
V
I
V
O(off)
R
l
O(on)
G
2
I(off)
I(on)
f
O
O
I
/R
T
=−0.3V
/l
I
1
I
I
−50m
=20
−50m
1
−100m
−100m
Min.
−3.0
0.8
30
7
−100
Typ.
250
1.0
10
Fig.2 Output current vs. input voltage
−500µ
−200µ
−100µ
−10m
−300
−880
−500
Max.
−0.5
−5m
−2m
−50µ
−20µ
−10µ
−1m
−1µ
−5µ
−2µ
1.2
13
0
Ta=100°C
(OFF characteristics)
−0.5
−40°C
MHz
Unit
mV
25°C
µA
nA
kΩ
INPUT VOLTAGE : V
V
−1.0
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
=−10mA, I
=−5V
=−0.3V, I
=−5V, I
−1.5
=−10V, I
=−5V, I
=−50V, V
2/2
−2.0
Conditions
O
I(off)
O
=−5mA
O
=−100µA
E
I
=−0.5mA
(V)
=−10mA
I
=5mA, f=100MHz
=0V
V
−2.5
CC
=−5V
−3.0
500
200
100
50
20
10
1k
−100µ
5
2
1
Fig.3 DC current gain vs. output
−200µ
current
OUTPUT CURRENT : I
−500µ
−1m
Ta=100°C
−2m
−40°C
25°C
−5m
2009.07 - Rev.B
−10m
O
−20m
(A)
Data Sheet
V
O
=−5V
−50m
−100m

Related parts for DTA114EUBTL