DTA114EUBTL Rohm Semiconductor, DTA114EUBTL Datasheet
DTA114EUBTL
Manufacturer Part Number
DTA114EUBTL
Description
TRAN DIGITL PNP 50V 100MA UMT3F
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.DTA114EUBTL.pdf
(3 pages)
Specifications of DTA114EUBTL
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTA114EUBTL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
-100mA / -50V Digital transistors
(with built-in resistors)
Inverter, Interface, Driver
1) Built-in bias resistors enable the configuration of
2) The bias resistors consist of thin-film resistors
3) Only the on/off conditions need to be set for
PNP silicon epitaxial planar transistor type
(Resistor built-in)
○
c
Part No.
DTA114EUB
www.rohm.com
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
Applications
Features
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
operation, making the device design easy.
an inverter circuit without connecting external
input resistors (see equivalent circuit).
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
DTA114EUB
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Packaging type
Code
Basic ordering unit (pieces)
Symbol
Ic(max)
Tstg
V
V
P
Io
Tj
CC
IN
D
∗2
∗1
UMT3F
Taping
3000
TL
−55 to +150
−40 to +10
Limits
−100
−50
−50
200
150
Unit
mW
mA
mA
°C
°C
V
V
1/2
R
(1) IN
(2) GND
(3) OUT
1
Dimensions (Unit : mm)
Inner circuit
UMT3F
=R
IN
2
IN
=10kΩ
R
1
R
2
GND(+)
0.32
Abbreviated symbol : 14
0.65 0.65
(3)
(1)
1.3
2.0
OUT
OUT
GND(+)
(2)
0.13
Each lead has same dimensions
0.9
2009.07 - Rev.B
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DTA114EUBTL Summary of contents
Page 1
Digital transistors (with built-in resistors) DTA114EUB Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film ...
Page 2
DTA114EUB Electrical characteristics (Ta=25°C) Parameter Symbol Min. − V I(off) Input voltage −3.0 V I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain ∗ − Transition frequency ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...