VT6X1T2R Rohm Semiconductor, VT6X1T2R Datasheet - Page 2

• Manufacturer Part Number: VT6X1T2R
• Description: TRANS NPN 20V 200MA VMT6
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of VT6X1T2R

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 2V
• Power - Max: 150mW
• Frequency - Transition: 400MHz
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

○
VT6X1
c
www.rohm.com
Electrical characteristics curves
2009 ROHM Co., Ltd. All rights reserved.
1000
100
0.01
0.01
100
10
0.1
0.1
1
0
10
COLLECTOR TO BASE VOLTAGE : V
1
1
0.01
BASE TO EMITTER VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
1
0
V
Ta=25 °C
f=1MHz
Ta=25 °C
CE
I
I
Ta=125°C
E
C
COLLECTOR CURRENT : I
=0
=0
=2V
I
0.2
C
I
C
0.1
-55°C
/I
25°C
/I
B
B =
= 20/1
10
10/1
0.4
Cob
1
Cib
0.6
100
10
0.8
C
(mA)
BE
EB
CB
1000
(V)
100
(V)
1
(V)
100
0.01
I
0.1
80
60
40
20
B
0
=1.0mA I
1
COLLECTOR TO EMITTER VOLTAGE :
0
1
Ta=125°C
I
C
COLLECTOR CURRENT : I
/I
B
-55°C
= 10/1
B
1
25°C
=0.9mA
10
2
V
2/2
I
CE
B
=0.8mA
(V)
3
100
Ta=25 °C
4
C
(mA)
1000
5
I
I
I
I
I
I
I
I
B
B
B
B
B
B
B
B
=0.7mA
=0.6mA
=0.5mA
=0.4mA
=0.3mA
=0.2mA
=0.1mA
=0mA
1000
1000
100
100
10
10
0.1
0.1
V
COLLECTOR CURRENT : I
Ta=25 °C
Ta=125°C
CE
EMITTER CURRENT : I
= 10V
-55°C
25°C
1
1
10
10
2009.06 - Rev.A
100
100
E
C
V
(mA)
(mA)
Data Sheet
CE
=2V
1000
1000