VT6X1T2R Rohm Semiconductor, VT6X1T2R Datasheet
VT6X1T2R
Manufacturer Part Number
VT6X1T2R
Description
TRANS NPN 20V 200MA VMT6
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.VT6X1T2R.pdf
(3 pages)
Specifications of VT6X1T2R
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (max)
-
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 2V
Power - Max
150mW
Frequency - Transition
400MHz
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Power management (dual transistors)
NPN silicon epitaxial planar transistor
Very small package with two transistors.
Switch, LED driver
○
c
Power dissipation
Junction temperature
Range of storage temperature
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
www.rohm.com
Type
VT6X1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Structure
Features
Applications
Packaging specifications
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
VT6X1
2009 ROHM Co., Ltd. All rights reserved.
∗1
∗2
Pw=1mS Single pulse
Each terminal mounted on a recommended land
Parameter
Package
Code
Basic ordering
unit (pieces)
Parameter
Total
Element
Symbol
Taping
V
V
V
8000
T2R
T
I
P
CBO
CEO
EBO
I
T
CP
stg
C
D
j
∗1
∗2
−55 to +150
Limits
200
400
150
120
150
20
20
5
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CEO
CBO
EBO
T
Unit
mW
mW
mA
mA
°C
°C
Min.
V
V
V
120
20
20
5
−
−
−
−
−
1/2
Typ.
0.12
400
−
−
−
−
−
−
2
Max.
0.30
560
0.1
0.1
−
−
−
−
−
Tr
VMT6
Each lead has same dimensions.
Dimensions (Unit : mm)
Inner circuit
MHz
1
Unit
µA
µA
pF
V
V
V
V
−
(1)
(6)
I
I
I
V
V
I
V
V
V
(2)
(5)
C
C
E
C
CB
EB
CE
CE
CB
=1mA
=50µA
=50µA
=100mA, I
=5V
=20V
=2V, I
=10V, I
=10V, I
(6)
(1)
0.4
Abbreviated symbol : X1
1.2 ± 0.1
0.8 ± 0.1
(4)
(3)
Tr
(5)
(2)
0.4
2
C
Conditions
=1mA
E
E
(4)
(3)
(1) Emitter
(2) Base
(3) Collector
(4) Emitter
(5) Base
(6) Collector
=−10mA, f=100MHz
=0A, f=1MHz
B
0.16 ± 0.05
=10mA
0.13 ± 0.05
2009.06 - Rev.A
0.5 ± 0.1
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr2)
(Tr1)
0 ~ 0.05
UNIT : mm
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VT6X1T2R Summary of contents
Page 1
Power management (dual transistors) VT6X1 Structure NPN silicon epitaxial planar transistor Features Very small package with two transistors. Applications Switch, LED driver Packaging specifications Package Taping Code T2R Basic ordering 8000 Type unit (pieces) VT6X1 Absolute maximum ratings (Ta=25°C) Symbol ...
Page 2
VT6X1 Electrical characteristics curves 1000 V =2V CE 100 Ta=125°C 25°C 10 -55°C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE : V ( Ta=25 ° 20 ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...