NTMFS4933NT1G ON Semiconductor, NTMFS4933NT1G Datasheet - Page 6

• Manufacturer Part Number: NTMFS4933NT1G
• Description: MOSFET N-CH 30V 232A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4933NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 62.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10930pF @ 15V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 2.74 W
• Mounting Style: SMD/SMT
• Fall Time: 23 ns
• Gate Charge Qg: 62.1 nC
• Rise Time: 33 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
100
0.1
0.000001
10
1
SINGLE PULSE
D = 0.5
0.05
0.02
0.01
0.2
0.1
0.00001
0.0001
260
240
220
200
180
160
140
100
12
80
60
40
20
0
0
10
TYPICAL CHARACTERISTICS
0.001
20
Figure 13. Thermal Response
http://onsemi.com
30
Figure 14. GFS vs. I
0.01
40
t, TIME (ms)
I
6
D
50
(A)
60
0.1
70
D
80
1
90
100
10
100
1000