NTMFS4933NT1G ON Semiconductor, NTMFS4933NT1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4933NT1G
• Description: MOSFET N-CH 30V 232A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4933NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 62.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10930pF @ 15V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 2.74 W
• Mounting Style: SMD/SMT
• Fall Time: 23 ns
• Gate Charge Qg: 62.1 nC
• Rise Time: 33 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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0.01
100
100
0.1
10
10
0
1
1
0.01
1
0
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
V
I
V
C
GS
D
DD
GS
= 25°C
= 15 A
= 20 V
Figure 9. Resistive Switching Time
V
= 15 V
= 10 V
V
5
DS
DS
Figure 7. Capacitance Variation
Variation vs. Gate Resistance
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
THERMAL LIMIT
PACKAGE LIMIT
0.1
R
DS(on)
G
Safe Operating Area
, GATE RESISTANCE (W)
10
LIMIT
C
C
C
iss
oss
rss
10
15
1
20
TYPICAL CHARACTERISTICS
10
T
V
J
GS
= 25°C
25
= 0 V
http://onsemi.com
t
t
10 ms
100 ms
1 ms
10 ms
dc
t
t
r
d(on)
d(off)
f
100
100
30
5
520
480
440
400
360
320
280
240
200
160
120
10
30
25
20
15
10
80
40
9
8
7
6
5
4
3
2
1
0
5
0
0
0.4
Figure 8. Gate−To−Source and Drain−To−Source
25
0
Figure 10. Diode Forward Voltage vs. Current
V
Q
Figure 12. Maximum Avalanche Energy vs.
T
GS
GS
T
J
J
20
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
0.5
T
SD
Starting Junction Temperature
J
Q
50
= 125°C
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
GD
Voltage vs. Total Charge
G
40
, TOTAL GATE CHARGE (nC)
0.6
75
60
Q
T
0.7
80
100
T
J
100
0.8
= 25°C
V
V
I
D
125
DD
GS
120
I
= 30 A
D
0.9
= 58 A
= 15 V
= 10 V
140
150
1.0