STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet - Page 8

• Manufacturer Part Number: STFW60N65M5
• Description: MOSFET N-CH TO-3PF/ISOWATT 218
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STFW60N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 59 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 100V
• Power - Max: 79W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11325-5

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/16
Figure 14. Normalized B
BV
(norm)
1.07
1.05
1.03
0.99
0.97
1.01
0.95
0.93
DSS
-50
-25
0
I
D
25
=1mA
50
VDSS
75
vs temperature
100
125
Doc ID 18222 Rev 2
AM09136v1
T
J
(°C)
Figure 15. Switching losses vs gate resistance
(μJ)
500
300
200
100
800
700
600
400
E
0
0
(1)
V
I
V
D
10
DD
GS
=30A
STFW60N65M5, STW60N65M5
=400V
=10V
20
30
40
Eon
Eoff
AM09137v1
R
G
(Ω)