STI12N65M5 STMicroelectronics, STI12N65M5 Datasheet - Page 13

• Manufacturer Part Number: STI12N65M5
• Description: MOSFET N-CH 650V 8.5A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STI12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11326-5

STD/F/I/P/U12N65M5
DIM.
D1
A1
A2
b4
E1
e1
L1
L2
L4
V2
c2
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
Doc ID 15428 Rev 4
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
Package mechanical data
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o
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