BUK9Y30-75B/C2,115 NXP Semiconductors, BUK9Y30-75B/C2,115 Datasheet - Page 3

• Manufacturer Part Number: BUK9Y30-75B/C2,115
• Description: MOSFET N-CH 75V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y30-75B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 1. Normalized continuous drain current as a
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
40
30
20
10
I
D
0
V
function of mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
10
10
I
(A)
10
AV
150
-1
2
1
10
-3
T
mb
03no16
(°C)
200
10
Rev. 04 — 10 April 2008
-2
10
-1
Fig 2. Normalized total power dissipation as a
(1)
(2)
(3)
P
(%)
der
120
80
40
0
1
P
function of mounting base temperature
0
der
t
AV
03np81
(ms)
=
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
10
P
50
tot
× 100 %
BUK9Y30-75B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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